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GMOS-S Array
The GMOS South detector array consists of three 2048x4608 EEV chips arranged in a row. The table below gives a summary of the current detector/controller characteristics.
| Array | EEV | ||
| Pixel format | 6144x4608 pixels | ||
| Array layout | Three 2048x4068 chips in a row with ~0.5mm gaps | ||
| Pixel size | 13.5 microns square; 0.073 arcsec/pixel | ||
| Spectral Response | approx 0.3 to 0.9 microns [ data / plot ] | ||
| Bias level | Bias image |
||
| Flat field response | Fringe images Flat field images |
||
| Readout time | See observing overheads page | ||
| Chip | CCD 01 | CCD 02 | CCD 03 |
| Chip ref no. | EEV 2037-06-03 |
EEV 8194-19-04 | EEV 8261-07-04 |
| Dark current* | 3 e-/pix/hr |
2 e-/pix/hr | 3 e-/pix/hr |
| Full Well ** | 125 ke- |
125 ke- | 125 ke- |
| Fringing at 900nm *** | 73% |
68% | 67% |
* Dark current measured at -113C by Gemini Observatory.
** Saturation can be avoided by assuming 100ke- for all chips
*** (peak-valley)/mean, measured from images taken at Gemini
Readnoise and Gain Values
The table below gives the gain/read-noise values for the current GMOS EEV CCDs measured in September 2006 after a replacement of the video boards installed in the SDSU controller. Only the setting for the best amplifiers are listed (3-amp mode). The normal setting for science observations is slow read and low gain. For the full table of read-noise and gain values at all settings and for all amps, click here. Note: GMOS South data obtained before September 1, 2006 should use the previous gain/read-noise values.
| Readout | Gain | CCD 01 (left amp) | CCD 02 (left amp) |
CCD 03 (right amp) |
|||
| rate | level | Gain (e-/DN) | noise (e- rms) | Gain (e-/DN) |
noise (e- rms) |
Gain (e-/DN) |
noise (e- rms) |
| Fast | High | 5.054 |
6.84 | 5.051 |
7.35 |
4.833 |
7.88 |
| " | Low | 2.408 |
4.49 | 2.295 |
4.42 |
2.260 |
4.09 |
| Slow | High | 4.954 |
5.70 | 4.532 |
4.81 |
4.411 |
4.34 |
| " | Low | 2.372 |
3.98 | 2.076 |
3.85 |
2.097 |
3.16 |