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GMOS-S Array

 

This information refers to the EEV detectors at GMOS-S. These were removed in may 2014 and are no longer available. The Hamamatsu detectors were installed in june 2014. 

 

The GMOS South detector array consists of three 2048x4608 EEV chips arranged in a row. The table below gives a summary of the current detector/controller characteristics.

Array EEV
Pixel format 6144x4608 pixels
Array layout Three 2048x4068 chips in a row with ~0.5mm gaps
Pixel size 13.5 microns square; 0.073 arcsec/pixel
Spectral Response approx 0.36 to 0.93 microns [ data / plot ]
Bias level Bias image
Flat field response Fringe images  Flat field images
Readout time See observing overheads page
Chip CCD 01 CCD 02 CCD 03
Chip ref no. EEV 2037-06-03
EEV 8194-19-04 EEV 8261-07-04
Dark current* 3 e-/pix/hr
2 e-/pix/hr 3 e-/pix/hr
Full Well ** 125 ke-
125 ke- 125 ke-
Fringing at 900nm *** 73%
68% 67%

* Dark current measured at -113C by Gemini Observatory.
** Saturation can be avoided by assuming 100ke- for all chips
*** (peak-valley)/mean, measured from images taken at Gemini

Readnoise and Gain Values

The table below gives the gain/read-noise values for the current GMOS EEV CCDs measured in September 2006 after a replacement of the video boards installed in the SDSU controller. Only the setting for the best amplifiers are listed (3-amp mode). The normal setting for science observations is slow read and low gain. For the full table of read-noise and gain values at all settings and for all amps, click here. Note: GMOS South data obtained before September 1, 2006 should use the previous gain/read-noise values.

Readout  Gain CCD 01 (left amp)
CCD 02 (left amp)
CCD 03 (right amp)
rate level Gain (e-/DN) noise (e- rms) Gain (e-/DN)
noise (e- rms)
Gain (e-/DN)
noise (e- rms)
Fast High 5.054
6.84
5.051
7.35
4.833
7.88
" Low 2.408
4.49
2.295
4.42
2.260
4.09
Slow High 4.954
5.70
4.532
4.81
4.411
4.34
" Low 2.372
3.98
2.076
3.85
2.097
3.16